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The role of surface roughness on the electron confinement in semiconductor quantum ringsCHAVES, A; E SILVA, J. Costa; FREIRE, J. A. K et al.Microelectronics journal. 2008, Vol 39, Num 3-4, pp 455-458, issn 0959-8324, 4 p.Conference Paper

Non-diffusive spatial segregation of surface reactants in corrosion simulationsCORDOBA-TORRES, P; BAR-ELI, K; FAIREN, V et al.Journal of electroanalytical chemistry (1992). 2004, Vol 571, Num 2, pp 189-200, issn 1572-6657, 12 p.Article

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layerSHEGAI, O. A; MASHANOV, V. I; NIKIFOROV, A. I et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2518-2520, issn 1386-9477, 3 p.Conference Paper

Light scattering to isolate a single interface within a multilayerGEORGES, Gaëlle; DEUMIE, Carole; AMRA, Claude et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7101, pp 71010V.1-71010V.10, issn 0277-786X, isbn 978-0-8194-7331-8 0-8194-7331-6, 1VolConference Paper

Microscopic characterization of corrosion morphology : A study in specular and diffuse neutron reflectivitySINGH, Surendra; BASU, Saibal.Surface science. 2006, Vol 600, Num 2, pp 493-496, issn 0039-6028, 4 p.Article

Influence of interface roughness on surface and bulk scatteringELIAS, Mady; CASTIGLIONE, Patrizia; ELIAS, Georges et al.Journal of the Optical Society of America. A, Optics, image science, and vision (Print). 2010, Vol 27, Num 6, pp 1265-1273, issn 1084-7529, 9 p.Article

Resonances and off-specular scattering in neutron waveguidesKOZHEVNIKOV, S. V; OTT, F; PAUL, A et al.The European physical journal. Special topics. 2009, Vol 167, pp 87-92, issn 1951-6355, 6 p.Conference Paper

Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfacesZHANG, R; LIN, J. C; YU, X et al.Microelectronic engineering. 2013, Vol 109, pp 97-100, issn 0167-9317, 4 p.Article

Interface roughness effect between gate oxide and metal gate on dielectric propertySON, J. Y; MAENG, W. J; KIM, Woo-Hee et al.Thin solid films. 2009, Vol 517, Num 14, pp 3892-3895, issn 0040-6090, 4 p.Conference Paper

Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile StrainYI ZHAO; TAKENAKA, Mitsuru; TAKAGI, Shinichi et al.IEEE electron device letters. 2011, Vol 32, Num 8, pp 1005-1007, issn 0741-3106, 3 p.Article

Reply to comments: Surface morphology and electronic structure of Ge/Si (1 1 1) 7 x 7 systemLOBO, Arun; GOKHALE, Shubha; KULKARNI, S. K et al.Applied surface science. 2001, Vol 185, Num 1-2, pp 44-46, issn 0169-4332Article

Modeling electron transport coherence in one and two-well terahertz step well quantum cascade structures with diagonal optical transitionsFREEMAN, Will.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8023, issn 0277-786X, isbn 978-0-8194-8597-7, 802305.1-802305.9Conference Paper

Vertical Transport in InAs/GaSb Superlattices: Model Results and Relation to In-Plane TransportSZMULOWICZ, F; BROWN, G. J.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7945, issn 0277-786X, isbn 978-0-8194-8482-6, 79451U.1-79451U.9Conference Paper

High-performance Cr/Sc multilayers for the soft X-ray rangeYULIN, Sergiy; FEIGL, Torsten; KAISER, Norbert et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59631T.1-59631T.7, issn 0277-786X, isbn 0-8194-5981-X, 1VolConference Paper

Experimental study of filler insertion effect on mean thermal contact conductanceTOMIMURA, Toshio.JSME international journal. Series B, fluids and thermal engineering. 2004, Vol 47, Num 3, pp 447-452, issn 1340-8054, 6 p.Article

Characterization of oxidized Ni3Al(1 1 0) and interaction of the oxide film with water vaporGARZA, M; MAGTOTO, N. P; KELBER, J. A et al.Surface science. 2002, Vol 519, Num 3, pp 259-268, issn 0039-6028, 10 p.Article

Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfacesPICKERING, C.Surface and interface analysis. 2001, Vol 31, Num 10, pp 927-937, issn 0142-2421Article

Effect of surface roughness on the determination of tissue optical propertiesMEIXIU SUN; CHUNPING ZHANG; SHENGWEN QI et al.Optik (Stuttgart). 2010, Vol 121, Num 4, pp 373-377, issn 0030-4026, 5 p.Article

Morphology of electrodeposited Ni/Cu multilayer : Specular and diffuse neutron reflectometry studyBASU, Saibal; SINGH, Surendra; GHOSH, S. K et al.Physica. B, Condensed matter. 2006, Vol 385-86, pp 656-658, issn 0921-4526, 3 p., 1Conference Paper

Detection of nano scale thin films with polarized neutron reflectometry at the presence of smooth and rough interfacesJAHROMI, Saeed S; SEYED FARHAD MASOUDI.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 255-263, issn 0947-8396, 9 p.Article

Influence of non-Gaussian roughness on sputter depth profilesLIU, Y; JIAN, W; WANG, J. Y et al.Applied surface science. 2013, Vol 276, pp 447-453, issn 0169-4332, 7 p.Article

A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devicesGOMEZ-CAMPOS, F. M; RODRIGUEZ-BOLIVAR, S; JIMENEZ-TEJADA, J. A et al.Solid-state electronics. 2005, Vol 49, Num 9, pp 1454-1460, issn 0038-1101, 7 p.Article

Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wellsSU, Sheng-Kai; LEE, Chien-Ping; VOSKOBOYNIKOV, O et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 48, pp 80-84, issn 1386-9477, 5 p.Article

Application of capacitance-voltage measurements to the determination of interface roughness in nanoparticulate field-effect transistorsOKAMURA, Koshi; NIKOLOVA, Donna; MECHAU, Norman et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 7, pp 1672-1676, issn 1862-6300, 5 p.Conference Paper

Simulations of surface roughness effects in planar superlensesSCHØLER, Mikkel; BLAIKIE, Richard J.Journal of optics. A, Pure and applied optics (Print). 2009, Vol 11, Num 10, issn 1464-4258, 105503.1-105503.6Article

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